Contact having self-aligned air gap spacers
US9768118B1 · kind B1 · utility
19Cited by
29References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2016 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Sep 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, and a dielectric layer on an upper surface of the semiconductor substrate. A contact stack is formed in the dielectric layer. The contact stack includes an electrically conductive contact element, and a contact liner on first and second opposing sidewalls of the contact element. A first air gap is interposed between the dielectric layer and the contact liner on the first side wall, and a second air gap interposed between the dielectric layer and the contact liner on the second side wall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.