Semiconductor device structures including a distributed bragg reflector
US9768123B2 · kind B2 · utility
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5References
16Claims
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Key dates
| Filing date | Oct 9, 2015 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Oct 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device structure comprises forming at least one reflective structure comprising at least two dielectric materials having different refractive indices over at least one radiation-sensitive structure, the at least one reflective structure configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range. Additional methods of forming a semiconductor device structure are described. Semiconductor device structures are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.