Patent · US Active

Method of producing a semiconductor device with protruding contacts

US9768131B2 · kind B2 · utility

1Cited by

5References

5Claims

0Family size

Assignee

AMS AG · AT

Inventors

Jochen Kraft · Bruck an der Mur, AT
Karl Rohracher · Graz, AT
Martin Schrems · Langenbruck, DE

Key dates

Filing date	Jan 14, 2015
Grant date	Sep 19, 2017
Priority date	—
Expiry date	Jan 14, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/13026
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A wiring (3) comprising electrical conductors (4, 5, 6, 7) is formed in a dielectric layer (2) on or above a semiconductor substrate (1), an opening is formed in the dielectric layer to uncover a contact pad (8), which is formed by one of the conductors, and a further opening is formed in the dielectric layer to uncover an area of a further conductor (5), separate from the contact pad. The further opening is filled with an electrically conductive material (9), and the dielectric layer is thinned from a side opposite the substrate, so that the electrically conductive material protrudes from the dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.