Switching device
US9768287B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2017 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Feb 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A switching device includes a semiconductor substrate having a first element range including first trenches for gates, and an ineffective range not including the first trenches. In an interlayer insulating film, a contact hole is provided within the first element range, and a wide contact hole is provided within the inactive range. The first metal layer contacts the semiconductor substrate within the contact hole and the wide contact hole. The insulating protective film covers an outer peripheral side portion of a bottom surface of a second recess which is provided in a surface of the first metal layer above the wide contact hole. A side surface of an opening provided in a portion of the insulating protective film that includes the first element range is disposed in the second recess. The second metal layer contacts the first metal layer and the side surface of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.