Semiconductor device with metal-filled groove in polysilicon gate electrode
US9768290B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Sep 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/662
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a body region of a first conductivity type in the substrate, a source region of a second conductivity type adjacent the body region, and a trench extending into the substrate. The trench contains a polysilicon gate electrode insulated from the substrate. The device further includes a dielectric layer on the substrate, a gate metallization on the dielectric layer and covering part of the substrate and a source metallization on the dielectric layer and electrically connected to the source region. The gate metallization includes two spaced apart fingers. The source metallization is spaced apart from the gate metallization and covers a different part of the substrate than the gate metallization. A metal-filled groove in the polysilicon gate electrode is electrically connected to the two spaced apart fingers, and extends along a length of the trench directly underneath at least part of the source metallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.