Multi-junction optoelectronic device

US9768329B1 · kind B1 · utility

Assignee

• ALTA DEVICES, INC. · US

Inventors

• Brendan M. Kayes · Los Angeles, US
• Gang He · Magnolia Trace, CA
• Sylvia Spruytte · Palo Alto, US
• I-Kang Ding · Mountain View, US
• Gregg Higashi · San Jose, US

Key dates

• Filing date: Dec 4, 2012
• Grant date: Sep 19, 2017
• Expiry date: Nov 4, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

An optoelectronic semiconductor device is disclosed. The optoelectronic device comprises a plurality of stacked p-n junctions. The optoelectronic semiconductor device includes a n-doped layer disposed below the p-doped layer to form a p-n layer such that electric energy is created when photons are absorbed by the p-n layer. Recesses are formed on top of the p-doped layer at the top of the plurality of stacked p-n junctions. The junctions create an offset and an interface layer is formed on top of the p-doped layer at the top of the plurality stacked p-n junctions. The optoelectronic semiconductor device also includes a window layer disposed below the plurality stacked p-n junctions. In another aspect, one or more optical filters are inserted into a multi-junction photovoltaic device to enhance its efficiency through photon recycling.