Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions

US9768330B2 · kind B2 · utility

Assignees

• Micron Technology, Inc. · US
• Massachusetts Institute of Technology · US

Inventors

• Roy Meade · Boise, US
• Karan Mehta · Cambridge, US
• Efraim Megged · Bet Shemesh, IL
• Jason S. Orcutt · Katonah, US
• Milos Popovic · Somerville, US
• Rajeev Ram · Arlington, US
• Jeffrey Shainline · Boulder, US
• Zvi Sternberg · Meitar, IL
• Vladimir Stojanovic · Lexington, US
• Ofer Tehar-Zahav · Petah Tikva, IL

Key dates

• Filing date: Aug 25, 2014
• Grant date: Sep 19, 2017
• Expiry date: Sep 13, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.