Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs

US9768339B2 · kind B2 · utility

Assignee

• IQE plc · GB

Inventors

• Robert Yanka · Kernersville, US
• Seokjae Chung · Suwon-si, KR
• Kalyan Nunna · High Point, US
• Rodney Pelzel · Emmaus, US
• Howard Williams · Baltimore, US

Key dates

• Filing date: Jun 21, 2016
• Grant date: Sep 19, 2017
• Expiry date: Jun 21, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

Optoelectronic detectors having one or more dilute nitride layers on substrates with lattice parameters matching or nearly matching GaAs are described herein. A semiconductor can include a substrate with a lattice parameter matching or nearly matching GaAs and a first doped III-V layer over the substrate. The semiconductor can also include an absorber layer over the first doped III-V layer, the absorber layer having a bandgap between approximately 0.7 eV and 0.95 eV and a carrier concentration less than approximately 1×1016 cm−3 at room temperature. The semiconductor can also include a second doped III-V layer over the absorber layer.