Patent · US Active

Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate

US9768343B2 · kind B2 · utility

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12Claims
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Key dates

Filing dateApr 29, 2014
Grant dateSep 19, 2017
Priority date
Expiry dateApr 29, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/547
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

Laser patterning methods utilize a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions to improve cell efficiency by avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.