Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate
US9768343B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Apr 29, 2014 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Apr 29, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Laser patterning methods utilize a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions to improve cell efficiency by avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.