Selective patterning of an integrated fluxgate device

US9771261B1 · kind B1 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Lee Alan Stringer · Frisco, US
• Mona Eissa · Plano, US
• Byron J.R. Shulver · Richardson, US
• Sopa Chevacharoenkul · Richardson, US
• Mark R. Kimmich · Frisco, US
• Sudtida Lavangkul · Sachse, US
• Mark L. Jenson · Greenfield, US

Key dates

• Filing date: Mar 17, 2016
• Grant date: Sep 26, 2017
• Expiry date: Mar 17, 2036

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/014
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.