Methods of forming patterns using photoresists
US9772555B2 · kind B2 · utility
49Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Feb 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a pattern, a lower coating layer and a photoresist layer are sequentially formed on an object layer. An exposure process may be performed such that the photoresist layer is divided into an exposed portion and a non-exposed portion. A portion of the lower coating layer overlapping or contacting the exposed portion is at least partially transformed into a polarity conversion portion that has a polarity substantially identical to that of the exposed portion. The non-exposed portion of the photoresist layer is selectively removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.