Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9773661B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Jun 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3322
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed if the precursor exists alone and under a condition in which a flow rate of the precursor supplied into the process chamber is larger than a flow rate of the precursor exhausted from an interior of the process chamber and forming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.