Method of forming micropatterns
US9773672B2 · kind B2 · utility
1Cited by
12References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Feb 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.