Non-volatile memory device and method of manufacturing same
US9773803B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2015 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Apr 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.