Semiconductor device

US9773990B1 · kind B1 · utility

Assignees

• TSINGHUA UNIVERSITY · CN
• HON HAI PRECISION INDUSTRY CO., LTD. · TW

Inventors

• Jin Zhang · Beijing, CN
• Yang Wei · Beijing, CN
• Kai-Li Jiang · Beijing, CN
• Shou-Shan Fan · Beijing, CN

Key dates

• Filing date: Apr 14, 2017
• Grant date: Sep 26, 2017
• Expiry date: Apr 14, 2037

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

The present disclosure relates to a semiconductor device comprising a first electrode, a second electrode, a third electrode, a fourth electrode, an insulating layer, and a nano-heterostructure. The nano-heterostructure comprises a first surface and a second surface. The first metallic carbon nanotube is located on the first surface and extends in a first direction. The semiconducting carbon nanotube is located on the first surface and extends in the first direction. The semiconducting carbon nanotube is parallel and spaced away from the first metallic carbon nanotube. The second metallic carbon nanotube is located on the second surface and extends in a second direction. An angle forms between the first direction and the second direction.