Patent · US Active

Method of production of a semiconducting structure comprising a strained portion

US9774167B2 · kind B2 · utility

1Cited by

2References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Alban Gassenq · Brioude, FR
Vincent Reboud · Paris, FR
Kevin Guilloy · Grenoble, FR
Vincent Calvo · Fontaine, FR
Alexei Tchelnokov · Meylan, FR

Key dates

Filing date	Sep 30, 2016
Grant date	Sep 26, 2017
Priority date	—
Expiry date	Sep 30, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/125
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.