Method for producing a single-crystalline layer
US9777393B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 15, 2013 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jan 3, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for fabricating a thin single-crystalline layer n, including steps of: a) providing a support substrate n, b) placing a seed sample n, c) depositing a thin layer n so as to form an initial interface region n including a proportion of seed sample n and a proportion of thin layer n, the proportion of seed sample n decreasing from the first peripheral part n towards the second peripheral part n, e) providing an energy input to the initial interface region n contiguous to the first peripheral part n so as to liquefy a portion n of the thin layer and form a solid/liquid interface region n, and f) gradually moving the energy input away from the seed sample n so as to solidify the portion n so as to gradually move the solid/liquid interface region n.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.