Sub-threshold enabled flash memory system
US9779788B1 · kind B1 · utility
2Cited by
15References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Aug 23, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory system for use in an electronic system comprising an integrated circuit such as a microcontroller. The flash memory system embodies one or more circuits adapted to operate at sub- or near-threshold voltage levels. These low-power circuits are selectively activated or de-activated to balance power dissipation with the response time of the memory system required in particular applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.