Magnetic random access memory (MRAM) and method of operation
US9779795B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Nov 21, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a first line coupled to a first terminal of a first memory cell, a second bit line coupled to a first terminal of a second memory cell, a sense amplifier coupled to a second end of the first bit line and a second end of the second bit line, a capacitor including a first terminal coupled to a first input of the sense amplifier and a second terminal coupled to a switch. The switch couples the second terminal of the capacitor to the second bit line during a calibration phase of a read operation and to the first bit line during a sense phase of the read operation. A current/voltage source drives current on the first bit line while the second line is floating during the calibration phase, and drives current on the second bit line while the first bit line is floating during the sense phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.