Non-volatile static random access memory devices and methods of operations
US9779814B2 · kind B2 · utility
4Cited by
13References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 9, 2011 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Feb 11, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/0063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Non-Volatile Static Random Access Memory (NVSRAM) cell devices applying only one single non-volatile element embedded in a conventional Static Random Access Memory (SRAM) cell are disclosed. The NVSRAM cell devices can be integrated into a compact cell array. The NVSRAM devices of the invention have a read/write speed of a conventional SRAM and non-volatile property of a non-volatile memory cell. The methods of operations for the NVSRAM devices of the invention are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.