Substrate treating apparatus and method
US9779918B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 17, 2014 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Nov 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a substrate processing apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, a plasma generation unit, a gas supplying unit, an exhaust adjusting unit, or the like. Residual gas and reaction by-products are generated in a chamber after a substrate is treated by using a gas supplied from the gas supplying unit or plasma excited by the plasma generation unit. The gas exhaust adjusting unit adjusts discharge amounts of residual gas and reaction by-products to adjust residence time or pressure of gas, plasma, or the like in the apparatus, thereby controlling a uniformity of the substrate treating process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.