Thermal processing method for wafer
US9779964B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jun 30, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jul 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3003
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a thermal processing method for wafer. A wafer is placed in an environment filled with a gas mixture comprising oxygen gas and deuterium gas, and a rapid thermal processing process is performed on a surface of the wafer. As a result, a denuded zone is formed on the surface of the wafer, deuterium atoms, which may be released to improve characteristics at an interface of semiconductor devices in a later fabrication process, are held in the wafer, and bulk micro-defects are formed far from the semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.