Patent · US Active

Plasma treatment method and method of manufacturing electronic component

US9779986B2 · kind B2 · utility

1Cited by
0References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 23, 2016
Grant dateOct 3, 2017
Priority date
Expiry dateAug 23, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/78
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided is a plasma treatment method including: placing a substrate carrier holding a substrate on a stage; adjusting a distance between a cover and the stage to a first distance in which the cover covers a frame without coming into contact with the substrate carrier; performing a plasma treatment on the substrate placed on the stage after the adjusting of the distance; carrying the substrate together with the substrate carrier out from a reaction chamber after the performing of the plasma treatment; and removing an adhered substance adhered to the cover by generating plasma in the inside of the reaction chamber after the carrying of the substrate, in which the distance between the cover and the stage in the removing of the adhered substance is a second distance greater than the first distance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.