Bipolar junction transistor formed on fin structures
US9780003B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Aug 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A method of forming a Bipolar Junction Transistor (BJT) includes forming an elongated collector line, forming an elongated emitter line parallel to the collector line, and forming an elongated base line parallel to the collector line and positioned between the collector line and the base line. The emitter line, the base line, and the collector line are formed over fin structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.