Structure and method for improved stabilization of cobalt cap and/or cobalt liner in interconnects
US9780035B1 · kind B1 · utility
6Cited by
6References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jun 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/288
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a metallization layer of a semiconductor device, in which copper is used for an interconnect material and cobalt is used to encapsulate the copper, includes introducing a material that will form an alloy with cobalt and resist a degradation of an effect of the cobalt on encapsulating the copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.