Michael Rizzolo
201Patents
10h-index
85Co-inventors
79Inventor score
Filing activity: Sep 24, 2009 → Apr 25, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9837355B2 | Method for maximizing air gap in back end of the line interconnect through via landing modification | Electricity | 294 | Active |
| US8027162B2 | Liquid-cooled electronics apparatus and methods of fabrication | Electricity | 95 | Active |
| US10707413B1 | Formation of embedded magnetic random-access memory devices | Electricity | 19 | Active |
| US10395986B1 | Fully aligned via employing selective metal deposition | Electricity | 16 | Active |
| US9911651B1 | Skip-vias bypassing a metallization level at minimum pitch | Electricity | 16 | Active |
| US9553019B1 | Airgap protection layer for via alignment | Electricity | 15 | Active |
| US9966337B1 | Fully aligned via with integrated air gaps | Electricity | 13 | Active |
| US10243020B1 | Structures and methods for embedded magnetic random access memory (MRAM) fabrication | Electricity | 11 | Active |
| US9917137B1 | Integrated magnetic tunnel junction (MTJ) in back end of line (BEOL) interconnects | Electricity | 10 | Active |
| US9754883B1 | Hybrid metal interconnects with a bamboo grain microstructure | Electricity | 10 | Active |
| US10045096B2 | Social media modification of behavior and mobile screening for impairment | Electricity | 8 | Active |
| US9685366B1 | Forming chamferless vias using thermally decomposable porefiller | Electricity | 8 | Active |
| US9418934B1 | Structure and fabrication method for electromigration immortal nanoscale interconnects | Electricity | 6 | Active |
| US10297750B1 | Wraparound top electrode line for crossbar array resistive switching device | Electricity | 6 | Active |
| US9548243B1 | Self aligned via and pillar cut for at least a self aligned double pitch | Electricity | 6 | Active |
| US9780035B1 | Structure and method for improved stabilization of cobalt cap and/or cobalt liner in interconnects | Electricity | 6 | Active |
| US10096769B2 | Bottom electrode for MRAM applications | Electricity | 6 | Active |
| US9431205B1 | Fold over emitter and collector field emission transistor | Physics | 6 | Active |
| US10204828B1 | Enabling low resistance gates and contacts integrated with bilayer dielectrics | Electricity | 6 | Active |
| US9793206B1 | Heterogeneous metallization using solid diffusion removal of metal interconnects | Electricity | 5 | Active |
| US10109579B2 | Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device | Electricity | 5 | Active |
| US9941088B2 | Fold over emitter and collector field emission transistor | Physics | 4 | Active |
| US10957850B2 | Multi-layer encapsulation to enable endpoint-based process control for embedded memory fabrication | Electricity | 4 | Active |
| US9758095B2 | Smartwatch blackbox | Performing Operations; Transporting | 4 | Active |
| US11223008B2 | Pillar-based memory hardmask smoothing and stress reduction | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.