Semiconductor device and method for manufacturing the same
US9780116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Dec 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a stacked body and a pillar. The stacked body includes insulating films, electrode films, and silicon containing films. Each of the insulating films and each of the electrode films are stacked alternately. One of the silicon containing films is provided between one of the insulating films and one of the electrode films. The pillar extends in the stacked body in a stacking direction of the insulating films and the electrode films. The pillar includes a silicon pillar and a memory film. The silicon pillar extends in the stacking direction. The memory film is provided between the silicon pillar and one of the electrode films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.