Silicon-on-insulator radio frequency device and silicon-on-insulator substrate
US9780164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2013 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jan 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-on-insulator radio frequency device and a silicon-on-insulator substrate are provided. In the silicon-on-insulator radio frequency device, a pit is formed on a surface of a high resistivity silicon plate which is close to a buried oxide layer. The pit may be filled with an insulating material, thereby increasing an equivalent surface resistance of the high resistivity silicon plate; or no insulating material is filled into the pit, that is, the pit remains a vacuum state or is only filled with air, which can increase the equivalent surface resistance of the high resistivity silicon plate as well. In such, an eddy current generated on a surface of the high resistivity silicon plate under the action of a radio frequency signal may be reduced. As a result, loss of the radio frequency signal is reduced and the linearity of the radio frequency signal is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.