Patent · US Active

Backside semiconductor growth

US9780210B1 · kind B1 · utility

45Cited by

7References

30Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Sinan Goktepeli · San Diego, US
Richard Hammond · Harriseahead, GB

Key dates

Filing date	Aug 11, 2016
Grant date	Oct 3, 2017
Priority date	—
Expiry date	Aug 11, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0212
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit structure may include a transistor on a front-side semiconductor layer supported by an isolation layer. The transistor is a first source/drain/body region. The integrated circuit structure may also include a raised source/drain/body region coupled to a backside of the first source/drain/body region of the transistor. The transistor is a raised source/drain/body region extending from the backside of the first source/drain/body region toward a backside dielectric layer supporting the isolation layer. The integrated circuit structure may further include a backside metallization coupled to the raised source/drain/body region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.