Semiconductor device including Fin- FET and manufacturing method thereof

US9780214B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Gin-Chen Huang · New Taipei, TW
• Tzu-Hsiang Hsu · Dashulong, TW
• Chia-Jung Hsu · Hsinchu, TW
• Feng-Cheng Yang · Dashulong, TW
• Teng-Chun Tsai · Hsinchu, TW

Key dates

• Filing date: Dec 22, 2014
• Grant date: Oct 3, 2017
• Expiry date: Dec 22, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a first fin structure for a first fin field effect transistor (FET). The first fin structure includes a first base layer protruding from a substrate, a first intermediate layer disposed over the first base layer and a first channel layer disposed over the first intermediate layer. The first fin structure further includes a first protective layer made of a material that prevents an underlying layer from oxidation. The first channel layer is made of SiGe, the first intermediate layer includes a first semiconductor (e.g., SiGe) layer disposed over the first base layer and a second semiconductor layer (e.g., Si) disposed over the first semiconductor layer. The first protective layer covers side walls of the first base layer, side walls of the first semiconductor layer and side walls of the second semiconductor layer.