Stabilized quantum dot structure and method of making a stabilized quantum dot structure
US9780266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jul 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.