Apparatus, techniques, and target designs for measuring semiconductor parameters
US9784690B2 · kind B2 · utility
9Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | May 8, 2015 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Aug 28, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/1296
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.