Capacitive sensor architecture for biometric sensing
US9785821B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 18, 2015 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Apr 4, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06V40/1306
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A capacitive sensor a method of making a capacitive sensor are disclosed. The capacitive sensor includes: a plurality of rows of sensor electrodes included in a first layer; a plurality of columns of sensor electrodes included in a second layer, where the plurality of columns of sensor electrodes are arranged orthogonally to the plurality of rows of sensor electrodes to form a two-dimensional sensing array; and, a plurality of conductive elements included in a third layer disposed between the first and second layers, wherein, for each conductive element of the plurality of conductive elements, a first end of the conductive element is electrically connected to a sensor electrode in the plurality of rows of sensor electrodes and a second end of the conductive element is capacitively coupled to a sensor electrode in the plurality of columns of sensor electrodes to form a trans-capacitive sensing pixel of the two-dimensional sensing array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.