Low resistance metal contacts to interconnects
US9786550B2 · kind B2 · utility
8Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2015 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Jun 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of fabricating a contact to interface with an interconnect in a semiconductor device are described. The device includes a dielectric layer formed on a semiconductor layer, and a contact fabricated in a via formed within the dielectric layer. An interconnect formed above the contact interfaces with an exposed surface of the contact opposite a surface closest to the semiconductor layer. The contact includes a contact material in a first portion of the contact and an interface metal in a second portion of the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.