Patent · US Active

Method for creating a connection between metallic moulded bodies and a power semiconductor which is used to bond to thick wires or strips

US9786627B2 · kind B2 · utility

1Cited by

11References

22Claims

0Family size

Assignee

DANFOSS SILICON POWER GMBH · DE

Inventors

Martin Becker · Kiel, DE
Ronald Eisele · Surendorf, DE
Frank Osterwald · Kiel, DE
Jacek Rudzki · Kiel, DE

Key dates

Filing date	Sep 10, 2012
Grant date	Oct 10, 2017
Priority date	—
Expiry date	Apr 4, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T156/10
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for connecting a power semi-conductor chip having upper-sided potential surfaces to thick wires or strips, consisting of the following steps: Providing a metal molded body corresponding to the shape of the upper-sided potential surfaces, applying a connecting layer to the upper-sided potential surfaces or to the metal molded bodies, and applying the metal molded bodies and adding a material fit, electrically conductive compound to the potential surfaces prior to the joining of the thick wire bonds to the non-added upper side of the molded body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.