CMOS image sensor structure with crosstalk improvement
US9786704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2015 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Oct 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
Abstract
A semiconductor device includes a substrate, a device layer, an anti-reflective coating layer, reflective structures, a composite grid structure, a passivation layer and color filters. The device layer is disposed on the substrate, in which trenches are formed in the device layer and the substrate. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed on the anti-reflective coating layer in the trenches respectively. The composite grid structure overlies the anti-reflective coating layer and the reflective structures. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer sequentially stacked on the reflective structures. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.