Image sensor device with sub-isolation in pixels

US9786710B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Su-Hua Chang · Zhongpu, TW
• Volume Chien · Siaying, TW
• Yung-Lung Hsu · Tainan, TW

Key dates

• Filing date: Sep 30, 2015
• Grant date: Oct 10, 2017
• Expiry date: Sep 30, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

An image sensor device includes a substrate, a color filter layer, at least a pixel, a main isolation structure and a sub-isolation structure. The color filter layer is disposed over the substrate. The color filter layer includes a first color filter having a single one of primary colors. The pixel is disposed in the substrate and aligned with the first color filter. The main isolation structure surrounds the pixel in the substrate. The sub-isolation structure is disposed to divide the pixel into a plurality of sub-first pixels. The sub-pixels correspond to the first color filter having the single one of primary colors, and each of the sub-first pixels includes a radiation sensor.