Patent · US Active

P-doping of group-III-nitride buffer layer structure on a heterosubstrate

US9786744B2 · kind B2 · utility

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1References

22Claims

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Assignee

Azur Space Solar Power GmbH · DE

Inventors

Stephan Lutgen · Regensburg, DE
Saad Murad · Erkrath, DE
Ashay Chitnis · Goleta, US

Key dates

Filing date	Nov 2, 2016
Grant date	Oct 10, 2017
Priority date	—
Expiry date	Nov 2, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/824
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.