Method of forming horizontal gate all around structure
US9786757B2 · kind B2 · utility
2Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2016 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Mar 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0128
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure provides a horizontal structure by using a double STI recess method. The double STI recess method includes: forming a plurality of fins on the substrate; forming shallow trench isolation between the fins; performing first etch-back on the shallow trench isolation; forming source and drain regions adjacent to channels of the fins; and performing second etch-back on the shallow trench isolations to expose a lower portion of the fins as a larger process window for forming gates of the fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.