Gate electrode of a semiconductor device, and method for producing same
US9786762B2 · kind B2 · utility
1Cited by
2References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 22, 2013 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Aug 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode having a metal layer, a metal oxide layer and a silicon layer containing a dopant, provided sequentially on the gate insulating film; and a transistor having a gate insulating film and a gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.