Integrated circuits having source/drain structure
US9786780B2 · kind B2 · utility
2Cited by
21References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2014 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Aug 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a gate structure over a substrate. A silicon-containing material structure is in each of recesses that are adjacent to the gate structure. The silicon-containing material structure has a first region and a second region, the second region is closer to the gate structure than the first region, and the first region is thicker than the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.