Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9786781B2 · kind B2 · utility
27Cited by
9References
28Claims
0Family size
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Key dates
| Filing date | Nov 17, 2016 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Nov 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.