Patent · US Active

Charge pump

US9787176B2 · kind B2 · utility

9Cited by

10References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Qing Dong · Beijing, CN
Tien-Chun Yang · San Jose, US
Yue-Der Chih · Baoshan, TW

Key dates

Filing date	Feb 10, 2016
Grant date	Oct 10, 2017
Priority date	—
Expiry date	Feb 10, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH02M3/07
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

In a charge pump circuit, a first circuit is configured to provide a first node with a first first-voltage level or a first second-voltage level. A second circuit is configured to provide a second node with a second first-voltage level or a second second-voltage level. The first node is coupled with a first end of the first capacitive element. The second node is coupled with a first end of the second capacitive device. A first end of the first voltage transfer circuit is configured to receive an input voltage. A second end of the first voltage transfer circuit is coupled with a second end of the first capacitive device and a first end of the second voltage transfer circuit. A second end of the second voltage transfer circuit is coupled with a second end of the second capacitive element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.