Method of aligning quadrate wafer in first photolithography process

US9791790B2 · kind B2 · utility

Assignee

• INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Jinmin Li · Beijing, CN
• Junxi WANG · Nanhu, CN
• Qingfeng KONG · Beijing, CN
• Jinxia Guo · Fengting, CN
• Xiaoyan Yi · Beijing, CN

Key dates

• Filing date: Jan 3, 2014
• Grant date: Oct 17, 2017
• Expiry date: Jan 3, 2034

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/42
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The present invention provides a method of aligning a quadrate wafer in a first photolithography process. The method includes: step A: fabricating mask aligning markers in a periphery region of a mask, which is used for a first exposure process of the quadrate wafer, around a mask pattern of the mask; step B: during the first exposure process, positioning the quadrate wafer in a preset region by using the mask aligning markers on the mask, and exposing the quadrate wafer through the mask; and step C: performing alignment for the quadrate wafer during a second exposure process and subsequent exposure processes by using aligning markers on the quadrate wafer that are obtained during the first exposure process. The method may be easily and reliably performed to ensure intact dies at periphery of a quadrate wafer to be produced and thus render increased yield of chips.