Patent · US Active

Bad column management in nonvolatile memory

US9792175B2 · kind B2 · utility

2Cited by
16References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 21, 2015
Grant dateOct 17, 2017
Priority date
Expiry dateNov 27, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/3418
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

When the number of bad columns in a memory or plane is less than a threshold number then a first Error Correction Code (ECC) scheme encodes user data in first pages of a first size. If the number of bad columns is greater than the threshold number then a second ECC scheme encodes the user data in second pages of a second size that is smaller than the first size.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.