Semiconductor memory device which applies multiple voltages to the word line
US9792996B1 · kind B1 · utility
16Cited by
8References
8Claims
0Family size
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Key dates
| Filing date | Sep 14, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Sep 14, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor memory device includes a word line and a driver. The word line coupled to a memory cell. The driver is configured to apply a voltage to the word line. When a voltage applied to the word line is changed from a first voltage to a second voltage, the driver applies a third voltage according to a voltage difference between the first voltage and the second voltage to the word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.