Preparing a semiconductor surface for epitaxial deposition

US9793104B2 · kind B2 · utility

Assignee

• AIXTRON SE · DE

Inventors

• Maxim Kelman · Mountain View, US
• Shahab Khandan · Pleasanton, US
• Scott Dunham · Fremont, US
• Tac Huynh · Hayward, US
• Kenneth B. K. Teo · St Ives, GB

Key dates

• Filing date: Jan 28, 2016
• Grant date: Oct 17, 2017
• Expiry date: Mar 17, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67103
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.