Reliability improvement of polymer-based capacitors by moisture barrier
US9793106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2015 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Nov 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to water molecules infiltrating the organic polymer material when the microelectronic device is exposed to water vapor in the operating ambient. Water molecule infiltration from water vapor in the ambient is effectively reduced by a moisture barrier comprising a layer of aluminum oxide formed by an atomic layer deposition (ALD) process. A microelectronic device includes a capacitor with organic polymer material in the capacitor dielectric and a moisture barrier with a layer of aluminum oxide formed by an ALD process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.