Method of manufacturing semiconductor device and non-transitory computer-readable recording medium
US9793112B2 · kind B2 · utility
1Cited by
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11Claims
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Assignee
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Key dates
| Filing date | Mar 23, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Mar 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.