Plasma discharge path
US9793208B2 · kind B2 · utility
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13References
20Claims
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Key dates
| Filing date | Sep 29, 2015 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Sep 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with a temporary discharge path. During back-end-of-line (BEOL), the temporary discharge path discharges a plasma charge collected in a device well, such as a floating p-type well. After processing, the temporary discharge path is rendered non-function, enabling the device to function properly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.