Patent · US Active

Plasma discharge path

US9793208B2 · kind B2 · utility

0Cited by
13References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 29, 2015
Grant dateOct 17, 2017
Priority date
Expiry dateSep 29, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/611
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device with a temporary discharge path. During back-end-of-line (BEOL), the temporary discharge path discharges a plasma charge collected in a device well, such as a floating p-type well. After processing, the temporary discharge path is rendered non-function, enabling the device to function properly.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.